A universal theme has been to exploit fast and contactless determination of the electric potential at the surface of an in-process semiconductor substrate to determine and characterize the electrical impact of preceding manufacturing methods to both control and optimize manufacturing yield. USF has had active programs in Defect Engineering and non-contact Defect Visualization for the past 25 years.
#CRYSTAL MAKER UNIVERSITY OF FLORIDA MSE FULL#
Specifically, for III-nitride semiconductors, the work spans across theoretical studies, bulk GaN growth, MOCVD growth, and device processing and design.įor this ARPA-E program the Lehigh/CPN team can contribute:ġ) Full device fabrication process including ICP and photoelectrochemical GaN etch capabilities and methods to control GaN lattice damage.Ģ) MOCVD GaN facilities and prior experience of selective regrowth of GaN, and unique growth mode used for nano-epitaxy of quantum structures and on nano-patterned substrates.ģ) Computational materials, computational nanostructures, TCAD modeling, and density functional theory simulations as tools to gain understanding of experimental results.Ĥ) Material and device characterization expertise, including IV, CV, TEM, AFM, PL, XRD, and XPS.Īddress: 19 Memorial Dr, Bethlehem, PA 18015 The CPN has vertically-integrated core research facilities and faculty expertise spanning from materials, devices, integrated systems, and computational. Lehigh University’s Center for Photonics and Nanoelectonics (CPN) has a faculty team of experts working on wide bandgap, III-nitride (AlInGaN) semiconductors.
Device testing capabilities such as high voltage/power current-voltage probe stations for wafer, die and package level devices are available.Īddress: Box 870286, Tuscaloosa, AL 35487-0286 Also available are unique capabilities for defect studies, such as deep level transient spectroscopy and deep level thermal spectroscopy, as well as deep staff expertise in defect physics.
Work will be performed in Sandia’s MESA facility, the largest government investment in microsystems technology in the world (more than $600M). Sandia National Laboratories has pioneered research and development in the area of III-N materials and devices for a variety of electronic and optoelectronic applications.
(5) Other novel experimental doping schemes and studies: The group is currently developing a new method to reduce the activation energy of the acceptor level in p-type GaN and AlGaN materials.Īddress: DEpt MSE, PO BOIx 116400, University of Forida, Gainesville FL 32611įederally Funded Research and Development Center (FFRDC) (1) Selective area etching and epitaxial regrowth of doped region by MOCVD: Ryou has worked on the regrowth of p-type InGaN and AlGaN layers to demonstrate GaN/InGaN heterojunction bipolar transistors (HBTs) and E-mode heterostructure field-effect transistors (HFETs) įor the PNDIODES program, we can contribute following research areas among target research listed in the announcement: Further details can be found in the group website. We are currently developing a new-concept strain-engineered multifunctional electronic and photonic devices based on InAlGaN heterostructures. The research at Ryou group at the University of Houston focuses on III-nitride semiconductor materials and devices with expertise in device modeling, epitaxial growth by MOCVD, heterostructure characterization, and device fabrication/characterization. Address: 1080 Marsh Rd, Menlo Park, CA 94025
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